15 March 2016 ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
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Proceedings Volume 9749, Oxide-based Materials and Devices VII; 97490W (2016) https://doi.org/10.1117/12.2213697
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis, and we analyze and compare the physical mechanisms underlying the photodetector behavior.
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A. Hierro, A. Hierro, G. Tabares, G. Tabares, M. Lopez-Ponce, M. Lopez-Ponce, J. M. Ulloa, J. M. Ulloa, A. Kurtz, A. Kurtz, E. Muñoz, E. Muñoz, V. Marín-Borrás, V. Marín-Borrás, V. Muñoz-Sanjose, V. Muñoz-Sanjose, J. M. Chauveau, J. M. Chauveau, "ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE", Proc. SPIE 9749, Oxide-based Materials and Devices VII, 97490W (15 March 2016); doi: 10.1117/12.2213697; https://doi.org/10.1117/12.2213697
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