27 February 2016 Low-voltage extended gate organic thin film transistors for ion sensing based on semi-conducting polymer electrodes
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Proceedings Volume 9749, Oxide-based Materials and Devices VII; 974912 (2016) https://doi.org/10.1117/12.2218397
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
We report a low-voltage organic field-effect transistor consisting of an extended gate sensory area to detect various ions in a solution. The device distinguishes various ions by the shift in threshold voltage and is sensitive to multiple ions with various concentrations. X-ray photoelectron spectroscopy measurements and the resistance changes at the sensor area prove that the ions are doped into the sensitive film at the sensor area. Because of the effect of doping, the conductivity of the semiconductor polymer film changes thus causing a threshold voltage shift.
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Shiliang Ji, Qi-Jun Sun, Shishir Venkatesh, Yan Yan, Ye Zhou, Jiaqing Zhuang, Li Zhou, Suting Han, Zong-Xiang Xu, V. A. L. Roy, "Low-voltage extended gate organic thin film transistors for ion sensing based on semi-conducting polymer electrodes", Proc. SPIE 9749, Oxide-based Materials and Devices VII, 974912 (27 February 2016); doi: 10.1117/12.2218397; https://doi.org/10.1117/12.2218397
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