27 February 2016 Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation
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Proceedings Volume 9749, Oxide-based Materials and Devices VII; 974916 (2016) https://doi.org/10.1117/12.2222255
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.
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Takayoshi Katase, Takayoshi Katase, Kenji Endo, Kenji Endo, Hiromichi Ohta, Hiromichi Ohta, } "Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation", Proc. SPIE 9749, Oxide-based Materials and Devices VII, 974916 (27 February 2016); doi: 10.1117/12.2222255; https://doi.org/10.1117/12.2222255
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