1 March 2016 Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition
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Abstract
We show the enhancement of the photoluminescence at λ = 1:5 μm in highly-doped (> 1021 cm-3) Er-Al2O3 samples by controlling the vertical distance between the Er-ions using atomic layer deposition (ALD) technique. Er2O3 and Al2O3 were deposited on top of silicon in an alternating fashion with ALD. Five Er2O3-Al2O3 samples were fabricated by keeping the amount of Er2O3 constant but changing the thickness of the Al2O3-layers between the Er2O3-layers. The PL spectra of the samples reveal that the PL signal enhances up to 90% when the vertical distance (the number of Al2O3-layers) between the Er-ions increases. The PL enhancement can be related to the reduction of up-conversion signal at 532 and 650 nm in the Er-ions. Our results demonstrate that ALD is an excellent technique to fabricate and to optimize Er-doped materials due to its unique depositions properties.
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John Rönn, John Rönn, Lasse Karvonen, Lasse Karvonen, Alexander Pyymäki-Perros, Alexander Pyymäki-Perros, Nasser Peyghambarian, Nasser Peyghambarian, Harri Lipsanen, Harri Lipsanen, Antti Säynätjoki, Antti Säynätjoki, Zhipei Sun, Zhipei Sun, } "Enhancement of the photoluminescence in Er-doped Al2O3 fabricated by atomic layer deposition", Proc. SPIE 9750, Integrated Optics: Devices, Materials, and Technologies XX, 97500P (1 March 2016); doi: 10.1117/12.2212990; https://doi.org/10.1117/12.2212990
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