Developing the OEIC solutions using two section light-emitting transistor

Shan-Fong Liang; Yuan-Fu Hsu; Gong-Sheng Cheng; Chao-Hsin Wu

doi:10.1117/12.2214013

1 March 2016 Developing the OEIC solutions using two section light-emitting transistor

Shan-Fong Liang, Yuan-Fu Hsu, Gong-Sheng Cheng, Chao-Hsin Wu

Author Affiliations +

Proceedings Volume 9750, Integrated Optics: Devices, Materials, and Technologies XX; 97500Q (2016) https://doi.org/10.1117/12.2214013
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

An integrated on-chip optical device composed of a multiple quantum-well light-emitter and photodetector in the lightemitting transistor (LET) platform is fabricated. The two devices are 400 μm in length and electrically isolated by dry etching with 4.9 μm gap. The two facets are formed by cleaving for optical output. In this report, we discuss the characteristics of the two-section device and demonstrate the optical detection by the heterojunction phototransistor (HPT) under different operation points (I_B and V_CE) and injected optical powers. The collector current of the HPT is 74.88 mA without illumination and 83.87 mA under illumination of 7.46μW at V_CE = 3 V and I_B= 12 mA, which exhibits 12% increment. The responsivity of the InGaP/GaAs HPT can reach to 711.74 A/W. At the electrical modulation bandwidth of phototransistor fT is enhanced from 1.4 GHz to 1.51 GHz under illumination. This is attributed to the Franz-Keldysh photon-assisted absorption at base-collector junction of light-emitting transistor, which produces additional holes and electrons to enhance the current gain. Through the analysis of small-signal equivalent circuit models, we can show the transit time by de-embedding the circuit parasitic effect. Extracting those parameters can clearly know the thermionic emission lifetime in the quantum well.

Citation Download Citation

Shan-Fong Liang, Yuan-Fu Hsu, Gong-Sheng Cheng, and Chao-Hsin Wu "Developing the OEIC solutions using two section light-emitting transistor", Proc. SPIE 9750, Integrated Optics: Devices, Materials, and Technologies XX, 97500Q (1 March 2016); https://doi.org/10.1117/12.2214013

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Transistors

Data modeling

Absorption

Microwave radiation

Photonic integrated circuits

Phototransistors

Circuit switching

Show All Keywords

Keywords/Phrases

Search In:

Publication Years