1 March 2016 Developing the OEIC solutions using two section light-emitting transistor
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Abstract
An integrated on-chip optical device composed of a multiple quantum-well light-emitter and photodetector in the lightemitting transistor (LET) platform is fabricated. The two devices are 400 μm in length and electrically isolated by dry etching with 4.9 μm gap. The two facets are formed by cleaving for optical output. In this report, we discuss the characteristics of the two-section device and demonstrate the optical detection by the heterojunction phototransistor (HPT) under different operation points (IB and VCE) and injected optical powers. The collector current of the HPT is 74.88 mA without illumination and 83.87 mA under illumination of 7.46μW at VCE = 3 V and IB = 12 mA, which exhibits 12% increment. The responsivity of the InGaP/GaAs HPT can reach to 711.74 A/W. At the electrical modulation bandwidth of phototransistor fT is enhanced from 1.4 GHz to 1.51 GHz under illumination. This is attributed to the Franz-Keldysh photon-assisted absorption at base-collector junction of light-emitting transistor, which produces additional holes and electrons to enhance the current gain. Through the analysis of small-signal equivalent circuit models, we can show the transit time by de-embedding the circuit parasitic effect. Extracting those parameters can clearly know the thermionic emission lifetime in the quantum well.
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Shan-Fong Liang, Yuan-Fu Hsu, Gong-Sheng Cheng, Chao-Hsin Wu, "Developing the OEIC solutions using two section light-emitting transistor", Proc. SPIE 9750, Integrated Optics: Devices, Materials, and Technologies XX, 97500Q (1 March 2016); doi: 10.1117/12.2214013; https://doi.org/10.1117/12.2214013
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