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3 March 2016 Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects
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Abstract
Integration of photonic components on the same photonic wafer permits future optical communication systems to be dense and advanced performance. This enables very fast information handling between photonic active components interconnected through passive optical low loss channels. We demonstrate the UV-Laser based Quantum Well Intermixing (QWI) procedure to engineer the band-gap of compressively strained InGaAsP/InP Quantum Well (QW) laser material. We achieved around 135nm of blue-shift by simply applying excimer laser (λ= 248nm). The under observation laser processed material also exhibits higher photoluminescence (PL) intensity. Encouraging experimental results indicate that this simple technique has the potential to produce photonic integrated devices and circuits.
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Mohammad Kaleem, Sajid Nazir, and Nazar Abbas Saqib "Bandgap engineering of InGaAsP/InP laser structure by photo-absorption-induced point defects", Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510E (3 March 2016); https://doi.org/10.1117/12.2212311
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