3 March 2016 Ultra-thin oxide interlayer wafer bonding for heterogeneous III-V/Si photonics integration
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We report a low-temperature (220°C) covalent bonding of InP-based epitaxy substrate to silicon substrate through a thin thermal oxide interlayer of around 20 nm. Our SiO2 interlayer is grown only on the silicon substrate, which avoids the challenge in obtaining high quality SiO2 film on III-V substrate. The 20 nm thin oxide is proved to be sufficient as the outgassing medium during the bonding process. It is found that the bonding has minimal effect on the transferred epitaxy layer. This is evident from the X-ray Diffraction and room temperature photoluminescence (PL) characterizations of the III-V sample before (as-grown) and after bonding, where no significant peak shifting or broadening is observed. The high resolution Transmission Electron Micrograph (HR-TEM) also reveals almost zero-defect atomic bonding between III-V and thermal oxide on silicon.
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Chee-Wei Lee, Chee-Wei Lee, Ying Shun Liang, Ying Shun Liang, Doris Keh-Ting Ng, Doris Keh-Ting Ng, Yi Yang, Yi Yang, Hnin Yu Yu Ko, Hnin Yu Yu Ko, Qian Wang, Qian Wang, "Ultra-thin oxide interlayer wafer bonding for heterogeneous III-V/Si photonics integration", Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510G (3 March 2016); doi: 10.1117/12.2218598; https://doi.org/10.1117/12.2218598


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