3 May 2016 Generic heterogeneously integrated III-V lasers-on-chip with metal-coated etched-mirror
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We demonstrate electrically-pumped III-V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded III-V on SiO2 also permits tight laser mode confinement in the active region due to high index contrast between III-V and SiO2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.
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Chee-Wei Lee, Chee-Wei Lee, Doris Keh-Ting Ng, Doris Keh-Ting Ng, Min Ren, Min Ren, Yuan-Hsing Fu, Yuan-Hsing Fu, Anthony Yew Seng Kay, Anthony Yew Seng Kay, Vivek Krishnamurthy, Vivek Krishnamurthy, Jing Pu, Jing Pu, Ai Ling Tan, Ai Ling Tan, Febiana Tjiptoharsono, Febiana Tjiptoharsono, Soo Bin Choo, Soo Bin Choo, Qian Wang, Qian Wang, "Generic heterogeneously integrated III-V lasers-on-chip with metal-coated etched-mirror", Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510M (3 May 2016); doi: 10.1117/12.2218395; https://doi.org/10.1117/12.2218395


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