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3 May 2016 Generic heterogeneously integrated III-V lasers-on-chip with metal-coated etched-mirror
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We demonstrate electrically-pumped III-V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded III-V on SiO2 also permits tight laser mode confinement in the active region due to high index contrast between III-V and SiO2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chee-Wei Lee, Doris Keh-Ting Ng, Min Ren, Yuan-Hsing Fu, Anthony Yew Seng Kay, Vivek Krishnamurthy, Jing Pu, Ai Ling Tan, Febiana Tjiptoharsono, Soo Bin Choo, and Qian Wang "Generic heterogeneously integrated III-V lasers-on-chip with metal-coated etched-mirror", Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510M (3 May 2016);


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