3 March 2016 Patterned semiconductor inverted quantum dot photonic devices
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A novel inverted quantum dot structure is presented, which consists of an InGaAs quantum well that has been periodically perforated and then filled with the higher bandgap GaAs barrier material. This structure exhibits a unique quantized energy structure something like a planar atomic bond structure and formation of allowed and forbidden energy bands instead of highly localized, fully discrete states. We describe the growth, processing and characteristics of inverted quantum dot structures and outline interesting and potentially important effects arising from the introduction of nanoscale features (<50 nm) in the active medium.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. J. Coleman, "Patterned semiconductor inverted quantum dot photonic devices", Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510N (3 March 2016); doi: 10.1117/12.2218556; https://doi.org/10.1117/12.2218556


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