3 March 2016 High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems
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Abstract
We present a new approach based on the integration of the functions of a high-efficiency current switch and a laser emitter into a single heterostructure as elements of time-of-flight (TOF) systems. The approach being developed employs the effect of an electrical bistability, which occurs in the general case in thyristor structures. We report recent results obtained in a study of the dynamic electrical and optical characteristics of the pulsed sources we developed. An effective generation of 2- to 100-ns laser pulses at a wavelength of 905 nm is demonstrated. The possibility of generating laser pulses shorter than 1 ns is considered. The maximum peak power reached values of 7 and 50 W for 10- and 100-ns pulses, respectively.
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Sergey Slipchenko, Sergey Slipchenko, Aleksandr Podoskin, Aleksandr Podoskin, Olga Soboleva, Olga Soboleva, Maxim S. Zakharov, Maxim S. Zakharov, Kirill Bakhvalov, Kirill Bakhvalov, Dmitrii Romanovich, Dmitrii Romanovich, Nikita Pikhtin, Nikita Pikhtin, Il`ya Tarasov, Il`ya Tarasov, Timur Bagaev, Timur Bagaev, Maxim Ladugin, Maxim Ladugin, Aleksandr Marmalyuk, Aleksandr Marmalyuk, Vladimir Simakov, Vladimir Simakov, } "High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems", Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510P (3 March 2016); doi: 10.1117/12.2212544; https://doi.org/10.1117/12.2212544
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