3 March 2016 High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems
Author Affiliations +
Abstract
We present a new approach based on the integration of the functions of a high-efficiency current switch and a laser emitter into a single heterostructure as elements of time-of-flight (TOF) systems. The approach being developed employs the effect of an electrical bistability, which occurs in the general case in thyristor structures. We report recent results obtained in a study of the dynamic electrical and optical characteristics of the pulsed sources we developed. An effective generation of 2- to 100-ns laser pulses at a wavelength of 905 nm is demonstrated. The possibility of generating laser pulses shorter than 1 ns is considered. The maximum peak power reached values of 7 and 50 W for 10- and 100-ns pulses, respectively.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Slipchenko, Aleksandr Podoskin, Olga Soboleva, Maxim S. Zakharov, Kirill Bakhvalov, Dmitrii Romanovich, Nikita Pikhtin, Il`ya Tarasov, Timur Bagaev, Maxim Ladugin, Aleksandr Marmalyuk, Vladimir Simakov, "High-efficiency and compact semiconductor lasers with monolithically integrated switches for generation of high-power nanosecond pulses in time-of-flight (TOF) systems", Proc. SPIE 9751, Smart Photonic and Optoelectronic Integrated Circuits XVIII, 97510P (3 March 2016); doi: 10.1117/12.2212544; https://doi.org/10.1117/12.2212544
PROCEEDINGS
5 PAGES


SHARE
Back to Top