14 March 2016 Silicon-based phase shifters for high figure of merit in optical modulation
Author Affiliations +
Proceedings Volume 9752, Silicon Photonics XI; 975202 (2016) https://doi.org/10.1117/12.2218184
Event: SPIE OPTO, 2016, San Francisco, California, United States
This paper focuses on latest progress in experimental and theoretical studies on silicon-based carrier-depletion PNjunction phase shifters in terms of high modulation efficiency for energy-efficient photonic networks of high transmission capacity. Modulation efficiency of rib-waveguide phase shifters having various PN-junction configuration are characterized with respect to DC figure of merit defined for phase shifters using carrier-plasma dispersion as the physical principle of refractive-index modulation. In addition, RF drive voltage required for 10-Gb/s on-off keying is characterized for rib-waveguide phase shifters including lateral and vertical PN-junction configurations.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kensuke Ogawa, Kensuke Ogawa, Kazuhiro Goi, Kazuhiro Goi, Norihiro Ishikura, Norihiro Ishikura, Hiroki Ishihara, Hiroki Ishihara, Shinichi Sakamoto, Shinichi Sakamoto, Tsung-Yang Liow, Tsung-Yang Liow, Xiaoguang Tu, Xiaoguang Tu, Guo-Qiang Lo, Guo-Qiang Lo, Dim-Lee Kwong, Dim-Lee Kwong, Soon Thor Lim, Soon Thor Lim, Min Jie Sun, Min Jie Sun, Ching Eng Png, Ching Eng Png, } "Silicon-based phase shifters for high figure of merit in optical modulation", Proc. SPIE 9752, Silicon Photonics XI, 975202 (14 March 2016); doi: 10.1117/12.2218184; https://doi.org/10.1117/12.2218184


Compact optical modulators with Si photonic crystals
Proceedings of SPIE (February 27 2013)
Optical modulation using the silicon platform
Proceedings of SPIE (March 14 2013)
320×256 InGaAs solid state low-light devices
Proceedings of SPIE (November 20 2014)
High-speed silicon optical modulators
Proceedings of SPIE (November 28 2011)

Back to Top