14 March 2016 Silicon-based phase shifters for high figure of merit in optical modulation
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Proceedings Volume 9752, Silicon Photonics XI; 975202 (2016) https://doi.org/10.1117/12.2218184
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
This paper focuses on latest progress in experimental and theoretical studies on silicon-based carrier-depletion PNjunction phase shifters in terms of high modulation efficiency for energy-efficient photonic networks of high transmission capacity. Modulation efficiency of rib-waveguide phase shifters having various PN-junction configuration are characterized with respect to DC figure of merit defined for phase shifters using carrier-plasma dispersion as the physical principle of refractive-index modulation. In addition, RF drive voltage required for 10-Gb/s on-off keying is characterized for rib-waveguide phase shifters including lateral and vertical PN-junction configurations.
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Kensuke Ogawa, Kazuhiro Goi, Norihiro Ishikura, Hiroki Ishihara, Shinichi Sakamoto, Tsung-Yang Liow, Xiaoguang Tu, Guo-Qiang Lo, Dim-Lee Kwong, Soon Thor Lim, Min Jie Sun, Ching Eng Png, "Silicon-based phase shifters for high figure of merit in optical modulation", Proc. SPIE 9752, Silicon Photonics XI, 975202 (14 March 2016); doi: 10.1117/12.2218184; https://doi.org/10.1117/12.2218184
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