Analysis of depletion silicon phase shifter based on computer simulation

Ching Eng Png; Min Jie Sun; Soon Thor Lim; Kensuke Ogawa

doi:10.1117/12.2210895

14 March 2016 Analysis of depletion silicon phase shifter based on computer simulation

Ching Eng Png, Min Jie Sun, Soon Thor Lim, Kensuke Ogawa

Proceedings Volume 9752, Silicon Photonics XI; 975204 (2016) https://doi.org/10.1117/12.2210895
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

In this work we reported the efficiency and loss performance of a depletion silicon rib phase shifter, with an overlayer of 220 nm, rib width of 500 nm, and etch depth of 125 nm. We identified a range of doping concentrations that allow the phase shifter to operate at <6 V and <5 dB loss. Junction placement variances are done with doping concentrations in this range. The study suggested that with reduced p dopant concentration (2×10¹⁷ cm^-3), both loss and phase performance will improve by 32% and 20% respectively when p region > n region, compared to central junction.

Citation Download Citation

Ching Eng Png, Min Jie Sun, Soon Thor Lim, and Kensuke Ogawa "Analysis of depletion silicon phase shifter based on computer simulation", Proc. SPIE 9752, Silicon Photonics XI, 975204 (14 March 2016); https://doi.org/10.1117/12.2210895

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