14 March 2016 Analysis of depletion silicon phase shifter based on computer simulation
Author Affiliations +
Proceedings Volume 9752, Silicon Photonics XI; 975204 (2016) https://doi.org/10.1117/12.2210895
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
In this work we reported the efficiency and loss performance of a depletion silicon rib phase shifter, with an overlayer of 220 nm, rib width of 500 nm, and etch depth of 125 nm. We identified a range of doping concentrations that allow the phase shifter to operate at <6 V and <5 dB loss. Junction placement variances are done with doping concentrations in this range. The study suggested that with reduced p dopant concentration (2×1017 cm-3), both loss and phase performance will improve by 32% and 20% respectively when p region > n region, compared to central junction.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Eng Png, Min Jie Sun, Soon Thor Lim, Kensuke Ogawa, "Analysis of depletion silicon phase shifter based on computer simulation", Proc. SPIE 9752, Silicon Photonics XI, 975204 (14 March 2016); doi: 10.1117/12.2210895; https://doi.org/10.1117/12.2210895
PROCEEDINGS
6 PAGES


SHARE
Back to Top