14 March 2016 Analysis of depletion silicon phase shifter based on computer simulation
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Proceedings Volume 9752, Silicon Photonics XI; 975204 (2016) https://doi.org/10.1117/12.2210895
Event: SPIE OPTO, 2016, San Francisco, California, United States
In this work we reported the efficiency and loss performance of a depletion silicon rib phase shifter, with an overlayer of 220 nm, rib width of 500 nm, and etch depth of 125 nm. We identified a range of doping concentrations that allow the phase shifter to operate at <6 V and <5 dB loss. Junction placement variances are done with doping concentrations in this range. The study suggested that with reduced p dopant concentration (2×1017 cm-3), both loss and phase performance will improve by 32% and 20% respectively when p region > n region, compared to central junction.
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Ching Eng Png, Ching Eng Png, Min Jie Sun, Min Jie Sun, Soon Thor Lim, Soon Thor Lim, Kensuke Ogawa, Kensuke Ogawa, } "Analysis of depletion silicon phase shifter based on computer simulation", Proc. SPIE 9752, Silicon Photonics XI, 975204 (14 March 2016); doi: 10.1117/12.2210895; https://doi.org/10.1117/12.2210895

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