14 March 2016 SWIR InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers integrated on SOI
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Proceedings Volume 9752, Silicon Photonics XI; 975209 (2016) https://doi.org/10.1117/12.2211802
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
The short-wave infrared wavelength range (2-3 μm) is attractive for applications in gas sensing and next-generation communication systems. Photodetectors and wavelength (de)multiplexers are key components that have to be developed for these systems. In this contribution, we report the integration of InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers on the silicon photonics platform. In this photodetector epitaxial layer stack, the absorbing active region consists of 6 periods of W-shaped quantum wells, which can also be used to realize lasers. The efficient coupling between silicon waveguides and quantum well photodetectors is realized by tapered III-V waveguides. The photodetectors have a very low dark current of 12 nA at -0.5 V bias at room temperature. The devices show a responsivity of 1.2 A/W at 2.32 μm wavelength, and higher than 0.5A/W over the 2.2-2.4 μm wavelength range. On the silicon-on-insulator platform we also demonstrate high performance short-wave infrared spectrometers. 8-channel spectrometers in the 2.3-2.4 μm range with a resolution of 5nm and 1.4nm are demonstrated, showing a cross-talk below -25 dB and an insertion loss lower than 3 dB.
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Ruijun Wang, Muhammad Muneeb, Stephan Sprengel, Gerhard Boehm, Roel Baets, Markus-Christian Amann, Gunther Roelkens, "SWIR InGaAs/GaAsSb type-II quantum well photodetectors and spectrometers integrated on SOI", Proc. SPIE 9752, Silicon Photonics XI, 975209 (14 March 2016); doi: 10.1117/12.2211802; https://doi.org/10.1117/12.2211802
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