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14 March 2016 Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si
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Proceedings Volume 9752, Silicon Photonics XI; 97520C (2016)
Event: SPIE OPTO, 2016, San Francisco, California, United States
The experimental demonstration of fundamental direct bandgap, group IV GeSn alloys has constituted an important step towards realization of the last missing ingredient for electronic-photonic integrated circuits, i.e. the efficient group IV laser source. In this contribution, we present electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%. Besides homojunction GeSn LEDs, complex heterojunction structures, such as GeSn/Ge multi quantum wells (MQWs) have been studied. Structural and compositional investigations confirm high crystalline quality, abrupt interfaces and tailored strain of the grown structures. While also being suitable for light absorption applications, all devices show light emission in a narrow short-wave infrared (SWIR) range. Temperature dependent electroluminescence (EL) clearly indicates a fundamentally direct bandgap in the 11 at.% Sn sample, with room temperature emission at around 0.55 eV (2.25 µm). We have, however, identified some limitations of the GeSn/Ge MQW approach regarding emission efficiency, which can be overcome by introducing SiGeSn ternary alloys as quantum confinement barriers.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nils von den Driesch, Daniela Stange, Stephan Wirths, Denis Rainko, Gregor Mussler, Toma Stoica, Zoran Ikonic, Jean-Michel Hartmann, Detlev Grützmacher, Siegfried Mantl, and Dan Buca "Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si", Proc. SPIE 9752, Silicon Photonics XI, 97520C (14 March 2016);

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