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14 March 2016 Hybrid integration of carbon nanotubes into silicon slot photonic structures
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Proceedings Volume 9752, Silicon Photonics XI; 97520D (2016)
Event: SPIE OPTO, 2016, San Francisco, California, United States
Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects. However, current Si photonics require on-chip integration of several materials, including III-V for lasing, doped silicon for modulation and Ge for detection. The very different requirements of these materials result in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. We are developing an alternative route towards the integration of optoelectronic devices in Si photonic, relying on the use of single wall carbon nanotubes (SWNTs). SWNTs can be considered as a Si compatible material able to emit, modulate and detect near-infrared light. Hence, they hold a unique potential to implement all active devices in the Si photonics platform. In addition, solution processed SWNTs can be integrated on Si using spin-coating techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Durán Valdeiglesias, W. Zhang, H. C. Hoang, C. Alonso-Ramos, A. Noury, S. Serna, X. Le Roux, E. Cassan, N. Izard, F. Sarti, U. Torrini, M. Balestrieri, A.-S. Keita, H. Yang, V. Bezugly, A. Vinattieri, G. Cuniberti, A. Filoramo, M. Gurioli, and L. Vivien "Hybrid integration of carbon nanotubes into silicon slot photonic structures", Proc. SPIE 9752, Silicon Photonics XI, 97520D (14 March 2016);

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