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14 March 2016 High-speed resonant detection via defect states in silicon disk resonators
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Proceedings Volume 9752, Silicon Photonics XI; 97520P (2016) https://doi.org/10.1117/12.2218173
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
This submission presents results on the frequency response of silicon resonant detectors, suitable for operation at wavelengths around 1550nm. The resonant structures are made sensitive to sub-bandgap light via the introduction of lattice defect states. An instability in operation is associated with the generation of free carriers within the resonant structure, producing a transient shift in the resonance wavelength. This manifests as a bit-pattern dependence for the detector, limiting the bandwidth of operation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew P. Knights and Jason J. Ackert "High-speed resonant detection via defect states in silicon disk resonators", Proc. SPIE 9752, Silicon Photonics XI, 97520P (14 March 2016); doi: 10.1117/12.2218173; https://doi.org/10.1117/12.2218173
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