14 March 2016 Keeping 2D materials visible even buried in SoI wafers
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Proceedings Volume 9752, Silicon Photonics XI; 97520R (2016) https://doi.org/10.1117/12.2213085
Event: SPIE OPTO, 2016, San Francisco, California, United States
In order to protect optoelectronic and mechanical properties of atomically thin layered materials (ATLMs) fabricated over SiO2/Si substrates, a secondary oxide or nitride layer can be capped over. However, such protective capping might decrease ATLMs’ visibility dramatically. Similar to the early studies conducted for graphene, we numerically determine optimum thicknesses both for capping and underlying oxide layers for strongest visibility of monolayer MoS2, MoSe2, WS2, and WSe2 in different regions of visible spectrum. We find that the capping layer should not be thicker than 60 nm. Furthermore the optimum capping layer thickness value can be calculated as a function of underlying oxide thickness, and vice versa.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ergun Simsek, Ergun Simsek, Bablu Mukherjee, Bablu Mukherjee, "Keeping 2D materials visible even buried in SoI wafers", Proc. SPIE 9752, Silicon Photonics XI, 97520R (14 March 2016); doi: 10.1117/12.2213085; https://doi.org/10.1117/12.2213085

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