15 March 2016 High performance Ge-on-Si avalanche photodetector
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Proceedings Volume 9753, Optical Interconnects XVI; 97531C (2016) https://doi.org/10.1117/12.2212510
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
We present high performance vertical-illumination type Ge-on-Si avalanche photodetectors and photoreceiver modules operating up to 25 Gb/s. The Ge avalanche photodetectors were grown on a bulk-silicon wafer by RPCVD, and fabricated with CMOS-compatible process. The fabricated devices show a -3dB bandwidth greater than 13 GHz at operational biases (gain> 20) for λ ~ 1550 nm. The measured maximum gain-bandwidth (GB) product is ~ 493 GHz. Two types of Ge-on-Si APD receiver modules exhibit high sensitivities of better than –20.7 dBm for a 25 Gb/s operation at a BER = 10-12 and λ ~ 1310 nm, and –27.75 dBm for a 10 Gb/s operation at a BER = 10-12 and λ ~ 1550nm, respectively.
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Ki-Seok Jang, Sanghoon Kim, In Gyoo Kim, Jin Hyuk Oh, Sun Ae Kim, Jiho Joo, Gyungock Kim, "High performance Ge-on-Si avalanche photodetector", Proc. SPIE 9753, Optical Interconnects XVI, 97531C (15 March 2016); doi: 10.1117/12.2212510; https://doi.org/10.1117/12.2212510
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