15 March 2016 High performance Ge-on-Si avalanche photodetector
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Proceedings Volume 9753, Optical Interconnects XVI; 97531C (2016) https://doi.org/10.1117/12.2212510
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
We present high performance vertical-illumination type Ge-on-Si avalanche photodetectors and photoreceiver modules operating up to 25 Gb/s. The Ge avalanche photodetectors were grown on a bulk-silicon wafer by RPCVD, and fabricated with CMOS-compatible process. The fabricated devices show a -3dB bandwidth greater than 13 GHz at operational biases (gain> 20) for λ ~ 1550 nm. The measured maximum gain-bandwidth (GB) product is ~ 493 GHz. Two types of Ge-on-Si APD receiver modules exhibit high sensitivities of better than –20.7 dBm for a 25 Gb/s operation at a BER = 10-12 and λ ~ 1310 nm, and –27.75 dBm for a 10 Gb/s operation at a BER = 10-12 and λ ~ 1550nm, respectively.
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Ki-Seok Jang, Ki-Seok Jang, Sanghoon Kim, Sanghoon Kim, In Gyoo Kim, In Gyoo Kim, Jin Hyuk Oh, Jin Hyuk Oh, Sun Ae Kim, Sun Ae Kim, Jiho Joo, Jiho Joo, Gyungock Kim, Gyungock Kim, } "High performance Ge-on-Si avalanche photodetector", Proc. SPIE 9753, Optical Interconnects XVI, 97531C (15 March 2016); doi: 10.1117/12.2212510; https://doi.org/10.1117/12.2212510
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