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13 February 2016 High-power CW GaSb type-I gain chips as single-frequency sources for widely tunable spectroscopy in the mid-infrared
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Abstract
In this work we present latest results on mid-infrared GaSb gain chips as high-output power narrow-linewidth continuouswave single-frequency laser sources for ultra-widely tunable spectroscopy and sensing applications. More than 30 mW CW output power with over 100 nm / chip tuning and < 1 MHz linewidth performance is demonstrated in the entire band from 1900 nm – 2450 nm covering most essential absorption features from CO, CO2, NH3, CH4 and N2O for environmental and medical applications. Finally, we report on complete single-frequency laser system with integrated gain-chip for highresolution spectroscopy and sensor applications.
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Ieva Šimonytė, Edgaras Dvinelis, Ramūnas Songaila, Augustinas Trinkūnas, Mindaugas Greibus, Kristijonas Vizbaras, and Augustinas Vizbaras "High-power CW GaSb type-I gain chips as single-frequency sources for widely tunable spectroscopy in the mid-infrared", Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97550J (13 February 2016); https://doi.org/10.1117/12.2207461
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