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13 February 2016 Radiation tolerance studies of long wavelength infrared InAs/GaSb detectors
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In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λc = 10.2μm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from jd = 5x10-5 A/cm2 at Vb = 0.1V and T = 80K to jd = 6x10-3 A/cm2 at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.
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Alexander Soibel, Sir B. Rafol, Arezou Khoshakhlagh, Jean Nguyen, Linda Hoglund, Anita Fisher, Sam A. Keo, David Z.-Y. Ting, and Sarath D. Gunapala "Radiation tolerance studies of long wavelength infrared InAs/GaSb detectors", Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 975511 (13 February 2016);

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