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14 March 2016 Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks
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Abstract
Conventionally, all-optical switching devices made out from bulk silicon and other semiconductors are limited by free-carrier relaxation time which spans from picoseconds to microseconds. In this work, we discuss the possibility to suppress the undesired long free-carrier relaxation in subwavelength dielectric nanostructures exhibiting localized magnetic Mie resonances. Numerical calculations show the unsymmetrical modification of the transmittance spectra of the nanodisks due the free carriers photo-injection. Such a spectral dependance allows to control temporal response of the nanostructure by varying the laser pulse spectum.
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Polina P. Vabishchevich, Alexander S. Shorokhov, Maxim R. Shcherbakov, and Andrey A. Fedyanin "Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks", Proc. SPIE 9756, Photonic and Phononic Properties of Engineered Nanostructures VI, 97560E (14 March 2016); https://doi.org/10.1117/12.2212294
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