InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate

M. Liao; S. Chen; M. Tang; J. Wu; Q. Jiang; A. Seeds; H. Liu

doi:10.1117/12.2213089

15 March 2016 InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate

M. Liao, S. Chen, M. Tang, J. Wu, Q. Jiang, A. Seeds, H. Liu

Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII; 975803 (2016) https://doi.org/10.1117/12.2213089
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

We report on high quality GaAs-on-Si layers with low threading dislocations obtained by a combination of nucleation layer and dislocation filter layers using the molecular beam epitaxy (MBE) growth method. As a result, we achieved a Si-based electrically pumped 1.3 μm InAs/GaAs quantum dot (QD) laser that lases up to 111°C with a lasing threshold of 200 A/cm², and a single facet output power exceeding 100 mW at room temperature. In addition to Si-based lasers, we also demonstrated the first Si-based InAs/GaAs QD superluminescent light-emitting diode (SLD), from which a close-to-Gaussian emission with a full width at half maximum (FWHM) of ~114 nm centered at ~1258 nm and maximum output power of 2.6 mW has been achieved.

Citation Download Citation

M. Liao, S. Chen, M. Tang, J. Wu, Q. Jiang, A. Seeds, and H. Liu "InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate", Proc. SPIE 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII, 975803 (15 March 2016); https://doi.org/10.1117/12.2213089

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