15 March 2016 InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate
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We report on high quality GaAs-on-Si layers with low threading dislocations obtained by a combination of nucleation layer and dislocation filter layers using the molecular beam epitaxy (MBE) growth method. As a result, we achieved a Si-based electrically pumped 1.3 μm InAs/GaAs quantum dot (QD) laser that lases up to 111°C with a lasing threshold of 200 A/cm2, and a single facet output power exceeding 100 mW at room temperature. In addition to Si-based lasers, we also demonstrated the first Si-based InAs/GaAs QD superluminescent light-emitting diode (SLD), from which a close-to-Gaussian emission with a full width at half maximum (FWHM) of ~114 nm centered at ~1258 nm and maximum output power of 2.6 mW has been achieved.
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M. Liao, M. Liao, S. Chen, S. Chen, M. Tang, M. Tang, J. Wu, J. Wu, Q. Jiang, Q. Jiang, A. Seeds, A. Seeds, H. Liu, H. Liu, "InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate", Proc. SPIE 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII, 975803 (15 March 2016); doi: 10.1117/12.2213089; https://doi.org/10.1117/12.2213089

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