7 March 2016 Towards p × n transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation
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Abstract
Transverse thermoelectrics promise entirely new strategies for integrated cooling elements for optoelectronics. The recently introduced p × n-type transverse thermoelectric paradigm indicates that the most important step to engineering artificial transverse thermoelectrics is to create alternate p- and n-doped layers with orthogonally oriented anisotropic conductivity. This paper studies an approach to creating extreme anisotropic conductivity in bulk-doped semiconductor thin films via ion implantation. This approach defines an array of parallel conduction channels with photolithographic patterning of an SiO2 mask layer, followed by proton implantation. With a 10 μm channel width and 20 μm pitch, both n-type and p-type Al0.42 Ga0.58As thin films demonstrate a conductivity anisotropy ratio σ /σ⊥ > 104 at room temperature, while the longitudinal resistivity along the channel direction after implantation only increased by a factor of 3.3 ∼ 3.6. This approach can be readily adapted to other semiconductor materials for artificial p × n-type transverse thermoelectrics as other applications.
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Yang Tang, Yang Tang, G. Koblmüller, G. Koblmüller, H. Riedl, H. Riedl, M. Grayson, M. Grayson, } "Towards p × n transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation", Proc. SPIE 9765, Optical and Electronic Cooling of Solids, 976508 (7 March 2016); doi: 10.1117/12.2214448; https://doi.org/10.1117/12.2214448
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