4 March 2016 Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
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Abstract
We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
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Emanuel P. Haglund, Emanuel P. Haglund, Sulakshna Kumari, Sulakshna Kumari, Petter Westbergh, Petter Westbergh, Johan S. Gustavsson, Johan S. Gustavsson, Gunther Roelkens, Gunther Roelkens, Roel Baets, Roel Baets, Anders Larsson, Anders Larsson, } "Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL", Proc. SPIE 9766, Vertical-Cavity Surface-Emitting Lasers XX, 976607 (4 March 2016); doi: 10.1117/12.2207301; https://doi.org/10.1117/12.2207301
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