Translator Disclaimer
4 March 2016 Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
Author Affiliations +
We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emanuel P. Haglund, Sulakshna Kumari, Petter Westbergh, Johan S. Gustavsson, Gunther Roelkens, Roel Baets, and Anders Larsson "Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL", Proc. SPIE 9766, Vertical-Cavity Surface-Emitting Lasers XX, 976607 (4 March 2016);

Back to Top