A concept of passive cavity surface–emitting laser is proposed aimed to control the temperature shift of the lasing
wavelength. The device contains an all–semiconductor bottom distributed Bragg reflector (DBR), in which the active
medium is placed, a dielectric resonant cavity and a dielectric top DBR, wherein at least one of the dielectric materials
has a negative temperature coefficient of the refractive index, dn/dT < 0. This is shown to be the case for commonly used
dielectric systems SiO2/TiO2 and SiO2/Ta2O5. Two SiO2/TiO2 resonant structures having a cavity either of SiO2 or TiO2
were deposited on a substrate, their optical power reflectance spectra were measured at various temperatures, and
refractive index temperature coefficients were extracted, dn/dT = 0.0021 K-1 for SiO2 and dn/dT = –0.0092 K-1 for TiO2.
Using such dielectric materials allows designing passive cavity surface–emitting lasers having on purpose either positive,
or zero, or negative temperature shift of the lasing wavelength dλ/dT. A design for temperature–insensitive lasing
wavelength (dλ/dT = 0) is proposed. Employing devices with temperature–insensitive lasing wavelength in wavelength
division multiplexing systems may allow significant reducing of the spectral separation between transmission channels
and an increase in number of channels for a defined spectral interval enabling low cost energy efficient uncooled devices.