Translator Disclaimer
4 March 2016 Controlling the parameters of wet lateral oxidation for VCSEL fabrication
Author Affiliations +
Physical parameters that need to be controlled during the wet oxidation of VCSEL mesas are numerous and include: temperature uniformity, vapor flow pattern, epitaxial thickness and composition uniformity, diffusion through adjacent layers, oxidation onset delay, etch skirt, and wafer surface prep. We report the results of our studies on some of these factors including vapor flow patterns, and oxidation front monitoring. The results are being used for the optimization of our commercial system for wet lateral oxidation.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Majid Riaziat, David Reed, and Alex Kor "Controlling the parameters of wet lateral oxidation for VCSEL fabrication", Proc. SPIE 9766, Vertical-Cavity Surface-Emitting Lasers XX, 97660H (4 March 2016);


The law of wet oxidation rate in 850nm VCSELs
Proceedings of SPIE (March 04 2015)
SCA and SPV in line monitoring
Proceedings of SPIE (September 19 1995)
Coplanar waveguides on SOI and OPS substrates
Proceedings of SPIE (April 30 2001)

Back to Top