Novel In-Plane Semiconductor Lasers XV
Proceedings Volume 9767 is from: Logo
13-18 February 2016
San Francisco, California, United States
Front Matter: Volume 9767
Proc. SPIE 9767, Front Matter: Volume 9767, 976701 (21 June 2016);
Structure and Cavity Developments
Proc. SPIE 9767, Type-I QW cascade diode lasers for spectral region above 3 um, 976703 (7 March 2016);
Proc. SPIE 9767, Generation of 7W nanosecond pulses with 670nm ridge-waveguide lasers, 976705 (7 March 2016);
Proc. SPIE 9767, GaAs-based self-aligned stripe superluminescent diodes processed normal to the cleaved facet, 976706 (7 March 2016);
Materials Developments
Proc. SPIE 9767, Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR, 976709 (7 March 2016);
Proc. SPIE 9767, First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique, 97670A (7 March 2016);
Blue/Green Emitters
Proc. SPIE 9767, Room-temperature continuous-wave operation of BeZnCdSe quantum-well green-to-yellow laser diodes with sub-10 mA threshold current, 97670C (9 March 2016);
Proc. SPIE 9767, Studies on 405nm blue-violet diode laser with external grating cavity, 97670E (7 March 2016);
Proc. SPIE 9767, Large TE polarized optical gain from AlInN-delta-GaN quantum well for ultraviolet lasers, 97670F (7 March 2016);
Quantum Dots
Proc. SPIE 9767, 1.5-um quantum dot laser material with high temperature stability of threshold current density and external differential efficiency, 97670I (8 March 2016);
Proc. SPIE 9767, High-temperature continuous wave operation (up to 100C) of InAs/InGaAs quantum dot electrically injected microdisk lasers, 97670J (7 March 2016);
Proc. SPIE 9767, High-speed directly modulated 1.5-um quantum dot lasers, 97670L (7 March 2016);
Cavity Effects and Mode-Locking
Proc. SPIE 9767, Timing jitter performance of mode-locked external cavity multi-quantum-well semiconductor lasers, 97670N (7 March 2016);
Proc. SPIE 9767, Interaction of phase and amplitude shaping in an external cavity semiconductor laser, 97670O (7 March 2016);
DFB and DBRs
Proc. SPIE 9767, Narrow-linewidth 1.5-um quantum dot distributed feedback lasers, 97670Q (7 March 2016);
Proc. SPIE 9767, Pulsed hybrid dual wavelength Y-branch-DFB laser-tapered amplifier system suitable for water vapor detection at 965 nm with 16 W peak power, 97670R (7 March 2016);
Proc. SPIE 9767, Difference frequency modulation of multi-section dual-mode lasers with nanoscale surface gratings, 97670S (7 March 2016);
Proc. SPIE 9767, 5,000 h reliable operation of 785nm dual-wavelength DBR-RW diode lasers suitable for Raman spectroscopy and SERDS, 97670T (7 March 2016);
Proc. SPIE 9767, First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 um, 97670U (7 March 2016);
Lasers on Silicon
Proc. SPIE 9767, Cavity enhanced 1.5-um LED with silicon as a hole injector, 97670Y (7 March 2016);
Proc. SPIE 9767, Photonic-crystal lasers on silicon for chip-scale optical interconnects, 976710 (7 March 2016);
Interband and Quantum Cascade Lasers
Proc. SPIE 9767, Interband cascade laser sources in the mid-infrared for green photonics, 976712 (10 March 2016);
Proc. SPIE 9767, Step-taper active-region quantum cascade lasers for carrier-leakage suppression and high internal differential efficiency, 976713 (10 March 2016);
Proc. SPIE 9767, Surface-emitting quantum cascade laser with 2nd-order metal-semiconductor gratings for single-lobe emission, 976714 (10 March 2016);
QCLs: Combs and Mode-Locking II
Proc. SPIE 9767, Frequency comb operation of long-cavity terahertz quantum-cascade lasers, 97671A (10 March 2016);
New Device Concepts
Proc. SPIE 9767, Quantum dots as active material for quantum cascade lasers: comparison to quantum wells, 97671E (10 March 2016);
High-Brightness Lasers
Proc. SPIE 9767, DBR tapered diode laser at 1030 nm with nearly diffraction-limited narrowband emission and 12.7 W of optical output power, 97671I (7 March 2016);
Proc. SPIE 9767, High performances of very long (13.5mm) tapered laser emitting at 975 nm, 97671J (15 March 2016);
Proc. SPIE 9767, Three-section master oscillator power amplifier at 1.57 um for LIDAR measurements of atmospheric carbon dioxide, 97671K (7 March 2016);
Proc. SPIE 9767, Novel approaches to increasing the brightness of broad area lasers, 97671L (7 March 2016);
QCLs: Cavities, Integration, and Applications
Proc. SPIE 9767, Monolithic integration of a quantum cascade laser array and an echelle grating multiplexer for widely tunable mid-infrared sources, 97671R (10 March 2016);
Proc. SPIE 9767, Regrowth-free mid-infrared distributed feedback quantum cascade lasers with sub-watt power consumption, 97671S (10 March 2016);
Proc. SPIE 9767, Spectroscopic benzene detection using a broadband monolithic DFB-QCL array, 97671T (10 March 2016);
Proc. SPIE 9767, Cascade laser applications: trends and challenges, 97671U (10 March 2016);
Proc. SPIE 9767, Single-mode enhancement in coupled-cavity quantum cascade lasers, 97671V (10 March 2016);
Poster Session
Proc. SPIE 9767, Simulation of broad spectral bandwidth emitters at 1060 nm for optical coherence tomography, 97671W (7 March 2016);
Proc. SPIE 9767, Three-dimensional finite-difference time-domain modelling of photonic crystal surface-emitting lasers, 976721 (7 March 2016);
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