7 March 2016 First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97670A (2016) https://doi.org/10.1117/12.2202768
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode.
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Mohammed A. Majid, Ahmad A. Al-Jabr, Rami T. Elafandy, Hassan M. Oubei, Mohd S. Alias, Bayan A. Alnahhas, Dalaver H. Anjum, Tien Khee Ng, Mohamed Shehata, Boon S. Ooi, "First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670A (7 March 2016); doi: 10.1117/12.2202768; https://doi.org/10.1117/12.2202768
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