7 March 2016 First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97670A (2016) https://doi.org/10.1117/12.2202768
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. Broad area devices fabricated from this novel cost-effective QWI technique lased at room-temperature at a wavelength as short as 608nm with a total output power of ~46mW. This is the shortest- wavelength electrically pumped visible semiconductor laser, and the first report of lasing action yet reported from post- growth interdiffused process. Furthermore, we also demonstrate the first yellow superluminescent diode (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW - the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode.
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Mohammed A. Majid, Mohammed A. Majid, Ahmad A. Al-Jabr, Ahmad A. Al-Jabr, Rami T. Elafandy, Rami T. Elafandy, Hassan M. Oubei, Hassan M. Oubei, Mohd S. Alias, Mohd S. Alias, Bayan A. Alnahhas, Bayan A. Alnahhas, Dalaver H. Anjum, Dalaver H. Anjum, Tien Khee Ng, Tien Khee Ng, Mohamed Shehata, Mohamed Shehata, Boon S. Ooi, Boon S. Ooi, } "First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670A (7 March 2016); doi: 10.1117/12.2202768; https://doi.org/10.1117/12.2202768
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