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7 March 2016 High-speed directly modulated 1.5μm quantum dot lasers
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97670L (2016) https://doi.org/10.1117/12.2209095
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
Due to the discrete density of states distribution and spatial localization of carriers in quantum dot (QD) material, the dynamics should be strongly enhanced in comparison to quantum well material. Based on improved 1.5 μm InAs/InGaAlAs/InP QD gain material short cavity ridge waveguide lasers were fabricated. Devices with cavity, lengths of 230 to 338 μm with high reflection coatings on the backside exhibit record value for any QD laser in small and large signal modulation performance with up to 15 GHz and 36 GBit/s, respectively, obtained at 14 °C. Due to the high temperature stability of threshold current and external differential efficiency, the lasers exhibit also nearly constant modulation bandwidth between 14-60 °C.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Saddam Banyoudeh, Alireza Abdollahinia, Ori Eyal, Florian Schnabel, Vitalii Sichkovskyi, Gadi Eisenstein, and Johann Peter Reithmaier "High-speed directly modulated 1.5μm quantum dot lasers", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670L (7 March 2016); https://doi.org/10.1117/12.2209095
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