7 March 2016 First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 μm
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97670U (2016) https://doi.org/10.1117/12.2213224
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 μm as potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.
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Mathieu Fradet, Mathieu Fradet, Takashi Hosoda, Takashi Hosoda, Clifford Frez, Clifford Frez, Leon Shterengas, Leon Shterengas, Stanley Sander, Stanley Sander, Siamak Forouhar, Siamak Forouhar, Gregory Belenky, Gregory Belenky, "First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 μm", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670U (7 March 2016); doi: 10.1117/12.2213224; https://doi.org/10.1117/12.2213224
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