7 March 2016 Cavity enhanced 1.5μm LED with silicon as a hole injector
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97670Y (2016) https://doi.org/10.1117/12.2213957
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
Here we report the demonstration of a Si/InAlGaAs/InP PIN cavity enhanced LED around 1.5 um by using membrane transfer method. The silicon layer is acting not only as the optical guiding layer but also the hole injection layer. The new hybrid integrated LED could be further developed as laser source for silicon photonics.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Liu, Dong Liu, Zhenyang Xia, Zhenyang Xia, SangJune Cho, SangJune Cho, Deyin Zhao, Deyin Zhao, Huilong Zhang, Huilong Zhang, Tzu-Hsuan Chang, Tzu-Hsuan Chang, Xin Yin, Xin Yin, Munho Kim, Munho Kim, Jung-Hun Seo, Jung-Hun Seo, Jaeseong Lee, Jaeseong Lee, Xudong Wang, Xudong Wang, Weidong Zhou, Weidong Zhou, Zhenqiang Ma, Zhenqiang Ma, } "Cavity enhanced 1.5μm LED with silicon as a hole injector", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670Y (7 March 2016); doi: 10.1117/12.2213957; https://doi.org/10.1117/12.2213957
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