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7 March 2016 Three-dimensional finite-difference time-domain modelling of photonic crystal surface-emitting lasers
Pavlo Ivanov, Richard J. E. Taylor, Guangrui Li, David T. D. Childs, Salam Khamas, Jayanta Sarma, Robertus Erdelyi, Richard A. Hogg
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 976721 (2016) https://doi.org/10.1117/12.2213060
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
We investigate the beam divergence in far-field region, diffraction loss and optical confinement factors of all-semiconductor and void-semiconductor photonic-crystal surface-emitting lasers (PCSELs), containing either InGaP/GaAs or InGaP/air photonic crystals using a three-dimensional FDTD model. We explore the impact of changing the PC hole shape, size, and lattice structure in addition to the choice of all-semiconductor or void-semiconductor designs. We discuss the determination of the threshold gain from the diffraction losses, and explore limitations to direct modulation of the PCSEL.
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Pavlo Ivanov, Richard J. E. Taylor, Guangrui Li, David T. D. Childs, Salam Khamas, Jayanta Sarma, Robertus Erdelyi, and Richard A. Hogg "Three-dimensional finite-difference time-domain modelling of photonic crystal surface-emitting lasers", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 976721 (7 March 2016); https://doi.org/10.1117/12.2213060
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KEYWORDS
Finite-difference time-domain method
Photonic crystals
Chemical species
Electroluminescence
Neodymium
Semiconductor lasers
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