7 March 2016 Three-dimensional finite-difference time-domain modelling of photonic crystal surface-emitting lasers
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Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 976721 (2016) https://doi.org/10.1117/12.2213060
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
We investigate the beam divergence in far-field region, diffraction loss and optical confinement factors of all-semiconductor and void-semiconductor photonic-crystal surface-emitting lasers (PCSELs), containing either InGaP/GaAs or InGaP/air photonic crystals using a three-dimensional FDTD model. We explore the impact of changing the PC hole shape, size, and lattice structure in addition to the choice of all-semiconductor or void-semiconductor designs. We discuss the determination of the threshold gain from the diffraction losses, and explore limitations to direct modulation of the PCSEL.
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Pavlo Ivanov, Pavlo Ivanov, Richard J. E. Taylor, Richard J. E. Taylor, Guangrui Li, Guangrui Li, David T. D. Childs, David T. D. Childs, Salam Khamas, Salam Khamas, Jayanta Sarma, Jayanta Sarma, Robertus Erdelyi, Robertus Erdelyi, Richard A. Hogg, Richard A. Hogg, "Three-dimensional finite-difference time-domain modelling of photonic crystal surface-emitting lasers", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 976721 (7 March 2016); doi: 10.1117/12.2213060; https://doi.org/10.1117/12.2213060
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