Proceedings Volume 9768 is from: Logo
13-18 February 2016
San Francisco, California, United States
Front Matter: Volume 9768
Proc. SPIE 9768, Front Matter: Volume 9768, 976801(21 June 2016);doi: 10.1117/12.2239988
Nanomaterials and Nanostructures for LEDs I
Proc. SPIE 9768, Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy, 976803(8 March 2016);doi: 10.1117/12.2212890
Proc. SPIE 9768, Single-crystal phosphors for high-brightness white LEDs/LDs, 976805(8 March 2016);doi: 10.1117/12.2212233
UV/DUV-Emitting LEDs
Proc. SPIE 9768, Investigation of light output uniformity and performance using a UV transmitting glass optic for a multi-UV LED array, 97680A(16 March 2016);doi: 10.1117/12.2209714
High Current Performance and Droop in InGaN LEDs
Proc. SPIE 9768, Light-emitting diodes for solid-state lighting: searching room for improvements, 97680C(8 March 2016);doi: 10.1117/12.2207265
Proc. SPIE 9768, Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties, 97680D(8 March 2016);doi: 10.1117/12.2210953
Novel Technologies for LED Design and Fabrication I
Proc. SPIE 9768, Emission characteristics of light-emitting diodes by confocal microscopy, 97680K(8 March 2016);doi: 10.1117/12.2213111
Novel Technologies for LED Design and Fabrication II
Proc. SPIE 9768, Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs, 97680N(8 March 2016);doi: 10.1117/12.2211046
Proc. SPIE 9768, Blue resonant-cavity light-emitting diode with half milliwatt output power, 97680P(8 March 2016);doi: 10.1117/12.2211663
Proc. SPIE 9768, Fabrication and characterization of broadband superluminescent diodes for 2 µm wavelength, 97680Q(16 March 2016);doi: 10.1117/12.2209720
Nanomaterials and Nanostructures for LEDs II
Proc. SPIE 9768, Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs, 97680T(8 March 2016);doi: 10.1117/12.2214122
LED Manufacturing I
Proc. SPIE 9768, Progress and challenges in GaN-on-Si LEDs, 97680W(8 March 2016);doi: 10.1117/12.2209679
Proc. SPIE 9768, Monolithic LED arrays, next generation smart lighting sources, 97680X(8 March 2016);doi: 10.1117/12.2209574
Proc. SPIE 9768, High-brightness low-power consumption microLED arrays, 97680Y(8 March 2016);doi: 10.1117/12.2210931
LED Applications and Solid-State Lighting
Proc. SPIE 9768, Advances in LEDs for automotive applications, 976811(8 March 2016);doi: 10.1117/12.2214205
Proc. SPIE 9768, 3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy, 976813(8 March 2016);doi: 10.1117/12.2208856
Proc. SPIE 9768, Progress in characterizing the multidimensional color quality properties of white LED light sources, 976814(8 March 2016);doi: 10.1117/12.2217661
Proc. SPIE 9768, Adaptive multi-wavelength LED star simulator for space life studies, 976815(23 March 2016);doi: 10.1117/12.2212608
LED Manufacturing II
Proc. SPIE 9768, Process control of MOCVD growth for LEDs by in-situ photoluminescence, 97681A(8 March 2016);doi: 10.1117/12.2209479
Proc. SPIE 9768, Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers, 97681D(8 March 2016);doi: 10.1117/12.2211721
Novel Substrates for LED Epistructure Growth and Green to Red LEDs
Proc. SPIE 9768, Development of semipolar (11-22) LEDs on GaN templates, 97681G(8 March 2016);doi: 10.1117/12.2204758
Proc. SPIE 9768, Room temperature green to red electroluminescence from (Al,Ga)As/GaP QDs and QWs, 97681I(8 March 2016);doi: 10.1117/12.2213382
Proc. SPIE 9768, Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates, 97681J(8 March 2016);doi: 10.1117/12.2211562
Proc. SPIE 9768, AlGaInP red-emitting light emitting diode under extremely high pulsed pumping, 97681K(8 March 2016);doi: 10.1117/12.2213344
Poster Session
Proc. SPIE 9768, Design and implementation of a deception jamming system for laser receivers, 97681M(8 March 2016);doi: 10.1117/12.2206011
Proc. SPIE 9768, Do we need to recalibrate our strategy in InGaN-on-SiC LED technology given its low efficiency?, 97681N(8 March 2016);doi: 10.1117/12.2211505
Proc. SPIE 9768, Epitaxial growth and photoluminescence properties of β-FeSi2 grains using liquid phase obtained by Au-Si eutectic reaction, 97681Q(8 March 2016);doi: 10.1117/12.2212057
Proc. SPIE 9768, Modeling of novel hybrid photonic crystal structures involving cured hydrogen silsesquioxane pillars for improving the light extraction in light-emitting diodes, 97681R(8 March 2016);doi: 10.1117/12.2212898
LED Manufacturing I
Proc. SPIE 9768, LED light engine concept with ultra-high scalable luminance, 976810(8 March 2016);doi: 10.1117/12.2224042
LED Manufacturing II
Proc. SPIE 9768, Aging behavior, reliability, and failure physics of GaN-based optoelectronic components, 97681E(8 March 2016);doi: 10.1117/12.2225128
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