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8 March 2016 Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs
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Abstract
Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Modestas Zulonas, Ilya E. Titkov, Amit Yadav, Ksenia A. Fedorova, Andrei F. Tsatsulnikov, Wsevolod V. Lundin, Alexey V. Sakharov, Thomas Slight, Wyn Meredith, and Edik U. Rafailov "Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680N (8 March 2016); https://doi.org/10.1117/12.2211046
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