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16 March 2016 Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength
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Abstract
Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest output power exhibit a narrower spectrum with about 61 nm FWHM.
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Nouman Zia, Jukka Viheriälä, Riku Koskinen, Mervi Koskinen, Soile Suomalainen, and Mircea Guina "Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680Q (16 March 2016); https://doi.org/10.1117/12.2209720
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