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8 March 2016 Progress and challenges in GaN-on-Si LEDs
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Abstract
Silicon substrates offer a variety of advantages over conventional LED substrates, including both their low cost and their compatibility with the existing semiconductor manufacturing infrastructure. Researchers have sought to avail themselves of these benefits by developing GaN LEDs on silicon substrates. Integration of the two materials, however, presents several technical challenges that have proven difficult to address. The main challenges are the large lattice mismatch between GaN and silicon and the large difference in thermal expansion coefficients. Solutions have begun to emerge in recent years, with Toshiba being the first to commercialize GaN-on-Si technology on 200mm substrates in 2013, and several companies now shipping GaN-on-Si LEDs. Toshiba has developed a novel buffer layer structure and MOCVD growth technology that controls strain, wafer bow, and cracking while also suppressing formation of dislocations. This technology allows for the growth of GaN epitaxial layers with minimal cracking and dislocation densities in the low 108 cm-2. Control of strain and wafer bow is critical for the epitaxial process, and this requires very fine control over both absolute wafer temperature and temperature uniformity. Toshiba’s technology controls temperature uniformity very well, and Toshiba has demonstrated wavelength uniformity with σ=2nm across a 200mm wafer. Thin film LEDs fabricated from these materials have efficiencies on par with the best efficiencies of LEDs grown on conventional substrates. Blue LED wall-plug efficiencies of ~83% are demonstrated.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William Fenwick "Progress and challenges in GaN-on-Si LEDs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97680W (8 March 2016); https://doi.org/10.1117/12.2209679
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