Translator Disclaimer
Paper
8 March 2016 3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy
Author Affiliations +
Abstract
The key issue for light emission strength of GaN-based LEDs is the high defect density and strain in MQWs causing the electric polarization fields. In this work, we construct 3D confocal microspectroscopy to clarify strain distribution and the relationship between photoluminescence (PL) intensity and pattern sapphire substrate (PSS). From 3D construction of E2high Raman and PL mapping, the dislocation in MQW can be traced to the cone tip of PSS and the difference in E2high Raman mapping between substrate and surface is also measured. The ability to measure strain change in 3D structure nondestructively can be applied to explore many structural problems of GaN-based optoelectronic devices.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heng Li, Chiao-Yun Chang, Hui-Yu Cheng, Wei-Liang Chen, Yi-Hsin Huang, Tien-Chang Lu, and Yu-Ming Chang "3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 976813 (8 March 2016); https://doi.org/10.1117/12.2208856
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top