3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy

Heng Li; Chiao-Yun Chang; Hui-Yu Cheng; Wei-Liang Chen; Yi-Hsin Huang; Tien-Chang Lu; Yu-Ming Chang

doi:10.1117/12.2208856

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8 March 2016 3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy

Heng Li, Chiao-Yun Chang, Hui-Yu Cheng, Wei-Liang Chen, Yi-Hsin Huang, Tien-Chang Lu, Yu-Ming Chang

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Proceedings Volume 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX; 976813 (2016) https://doi.org/10.1117/12.2208856
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

The key issue for light emission strength of GaN-based LEDs is the high defect density and strain in MQWs causing the electric polarization fields. In this work, we construct 3D confocal microspectroscopy to clarify strain distribution and the relationship between photoluminescence (PL) intensity and pattern sapphire substrate (PSS). From 3D construction of E₂^high Raman and PL mapping, the dislocation in MQW can be traced to the cone tip of PSS and the difference in E₂^high Raman mapping between substrate and surface is also measured. The ability to measure strain change in 3D structure nondestructively can be applied to explore many structural problems of GaN-based optoelectronic devices.

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Heng Li, Chiao-Yun Chang, Hui-Yu Cheng, Wei-Liang Chen, Yi-Hsin Huang, Tien-Chang Lu, and Yu-Ming Chang "3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 976813 (8 March 2016); https://doi.org/10.1117/12.2208856

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