8 March 2016 Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers
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Abstract
Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).
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Shuo-Wei Chen, Young Yang, Wei-Chih Wen, Heng Li, Tien-Chang Lu, "Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681D (8 March 2016); doi: 10.1117/12.2211721; https://doi.org/10.1117/12.2211721
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