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8 March 2016 Development of semipolar (11-22) LEDs on GaN templates
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We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created by overgrowth on structured r-plane sapphire substrates. Low defect density, 100 mm diameter GaN templates were obtained by metal organic vapour phase epitaxy (VPE) and hydride VPE techniques. Chemical-mechanical polishing was used to obtain smooth surfaces for the subsequent growth of LED structures. Ohmic contacts to the p-type GaN were obtained despite the lower activated acceptor levels. The LEDs show excellent output power and fast carrier dynamics. Freestanding LEDs have been obtained by use of laser-lift-off. The work is the result of collaboration under the European Union funded ALIGHT project.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Corbett, Z. Quan, D. V. Dinh, G. Kozlowski, D. O'Mahony, M. Akhter, S. Schulz, P. Parbrook, P. Maaskant, M. Caliebe, M. Hocker, K. Thonke, F. Scholz, M. Pristovsek, Y. Han, C. J. Humphreys, F. Brunner, M. Weyers, T. M. Meyer, and L. Lymperakis "Development of semipolar (11-22) LEDs on GaN templates", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681G (8 March 2016);

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