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8 March 2016Development of semipolar (11-22) LEDs on GaN templates
B. Corbett,1 Z. Quan,1 D. V. Dinh,1 G. Kozlowski,1 D. O'Mahony,1 M. Akhter,1 S. Schulz,1 P. Parbrook,1 P. Maaskant,1 M. Caliebe,2 M. Hocker,2 K. Thonke,2 F. Scholz,2 M. Pristovsek,3 Y. Han,3 C. J. Humphreys,3 F. Brunner,4 M. Weyers,4 T. M. Meyer,5 L. Lymperakis6
1Univ. College Cork (Ireland) 2Univ. Ulm (Germany) 3Univ. of Cambridge (United Kingdom) 4Ferdinand-Braun-Institut (Germany) 5OSRAM Opto Semiconductors GmbH (Germany) 6Max-Planck-Institut für Eisenforschung GmbH (Germany)
We report on blue and green light-emitting-diodes (LEDs) grown on (11-22)-GaN templates. The templates were created
by overgrowth on structured r-plane sapphire substrates. Low defect density, 100 mm diameter GaN templates were
obtained by metal organic vapour phase epitaxy (VPE) and hydride VPE techniques. Chemical-mechanical polishing
was used to obtain smooth surfaces for the subsequent growth of LED structures. Ohmic contacts to the p-type GaN
were obtained despite the lower activated acceptor levels. The LEDs show excellent output power and fast carrier
dynamics. Freestanding LEDs have been obtained by use of laser-lift-off. The work is the result of collaboration under
the European Union funded ALIGHT project.
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B. Corbett, Z. Quan, D. V. Dinh, G. Kozlowski, D. O'Mahony, M. Akhter, S. Schulz, P. Parbrook, P. Maaskant, M. Caliebe, M. Hocker, K. Thonke, F. Scholz, M. Pristovsek, Y. Han, C. J. Humphreys, F. Brunner, M. Weyers, T. M. Meyer, L. Lymperakis, "Development of semipolar (11-22) LEDs on GaN templates," Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681G (8 March 2016); https://doi.org/10.1117/12.2204758