8 March 2016 Room temperature green to red electroluminescence from (Al,Ga)As/GaP QDs and QWs
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Abstract
We present the growth, fabrication, and characterization of light-emitting diodes based on (Al,Ga)As quantum wells and dots embedded in a p-n GaP structure. Samples were grown on Sulphur-doped GaP (001) substrate using gas-source molecular beam epitaxy. The structures include either GaAs quantum structures with nominal coverage between 1.2 and 3.6 monolayers or Al0.3Ga0.7As quantum wells. For structures with GaAs layer thicker than 1.5 monolayers the 3.6% lattice mismatch in the materials system results in formation of quantum dots via Stranski-Krastanow growth mode with areal density of about 8×1010 cm-2. The atomic-force and transmission-electron microscopy show that with increasing coverage of GaAs from 1.8 to 3.6 monolayers the average lateral size and height of dots change in the range of 17-34 nm and 0.9–2 nm, respectively. The diode structures emit light from the red to the green spectral range up to room temperature. The GaAs/GaP QDs show electroluminescence between 1.8 eV and 2 eV, whereas the Al0.3Ga0.7As quantum wells emit light between 2 eV and 2.2 eV.
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Christian Golz, Shabnam Dadgostar, W. Ted Masselink, Fariba Hatami, "Room temperature green to red electroluminescence from (Al,Ga)As/GaP QDs and QWs", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681I (8 March 2016); doi: 10.1117/12.2213382; https://doi.org/10.1117/12.2213382
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