8 March 2016 Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates
Author Affiliations +
The integration of light emitting devices on silicon substrates has attracted intensive research for many years. In contrast to the InGaN light emitting diodes (LEDs) whose epitaxy technology on Si substrates is robust and mature, the epitaxy of other compound semiconductor light emitting materials covering the visible wavelength range on Si is still challenging. We have studied epitaxial growth of red InGaP light emitting materials on engineered Ge-on-Si substrates. Ge-on-Si was grown on 8’’ Si substrates in a metal organic chemical vapour deposition (MOCVD) reactor using two- step growth and cycling annealing. Threading dislocation densities (TDDs) were controlled to as low as 106/cm2 by using As-doped Ge initiation. A GaAs buffer layer and lattice-matched InGaP LEDs were grown on the Ge-on-Si sequentially in the same MOCVD process and red LEDs are demonstrated. InGaP multiple-quantum-well LED structures were grown on full 8’’ Ge-on-Si substrates and characterized.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bing Wang, Cong Wang, Kwang Hong Lee, Shuyu Bao, Kenneth Eng Kian Lee, Chuan Seng Tan, Soon Fatt Yoon, Eugene A. Fitzgerald, Jurgen Michel, "Red InGaP light-emitting diodes epitaxially grown on engineered Ge-on-Si substrates", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681J (8 March 2016); doi: 10.1117/12.2211562; https://doi.org/10.1117/12.2211562


The integration of InGaP LEDs with CMOS on 200 mm...
Proceedings of SPIE (February 20 2017)
SiGe-based light-emitting diodes
Proceedings of SPIE (March 19 1999)
AlGaInP green light-emitting diode
Proceedings of SPIE (October 23 1992)

Back to Top