7 March 2016 Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes
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Proceedings Volume 9770, Advances in Display Technologies VI; 97700H (2016) https://doi.org/10.1117/12.2213850
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.
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Mateusz Mądzik, Mateusz Mądzik, Elangovan Elamurugu, Elangovan Elamurugu, Jaime Viegas, Jaime Viegas, } "Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes", Proc. SPIE 9770, Advances in Display Technologies VI, 97700H (7 March 2016); doi: 10.1117/12.2213850; https://doi.org/10.1117/12.2213850
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