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12 February 2016 Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems
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Abstract
This paper reviews advances in sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems. Graphene-channel field effect transistors (G-FETs) and InP-based high electron mobility transistors (inP-HEMT) are experimentally examined as photonic frequency converters. Optoelectronic properties and three-terminal functionalities of the G-FETs and InP-HEMTs are exploited to perform single-chip photonic double-mixing operation over the 120 GHz wireless communication band. A single transistor can photomix the optical subcarriers to generate LO and mix down the RF data on the sub-THz carrier to the IF band.
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Taiichi Otsuji, Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Jun-ichi Kani, and Jun Terada "Sub-THz photonic frequency conversion using optoelectronic transistors for future fully coherent access network systems", Proc. SPIE 9772, Broadband Access Communication Technologies X, 977204 (12 February 2016); https://doi.org/10.1117/12.2209211
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