Proceedings Volume 9776 is from: Logo
21-25 February 2016
San Jose, California, United States
Front Matter: Volume 9776
Proc. SPIE 9776, Front Matter: Volume 9776, 97762W(2 August 2016);doi: 10.1117/12.2240660
Keynote Session
Proc. SPIE 9776, EUV progress toward HVM readiness, 977602(18 March 2016);doi: 10.1117/12.2225014
EUV Materials I: MOx Resists: Joint session with Conferences 9776 and 9779
Proc. SPIE 9776, Recent progress in nanoparticle photoresists development for EUV lithography, 977604(18 March 2016);doi: 10.1117/12.2218704
Proc. SPIE 9776, Novel ultra-high sensitive 'metal resist' for EUV lithography, 977605(18 March 2016);doi: 10.1117/12.2219056
Proc. SPIE 9776, Novel metal containing resists for EUV lithography extendibility, 977606(18 March 2016);doi: 10.1117/12.2220149
EUV Materials II: CARs and Novel Approaches: Joint Session with Conferences 9776 and 9779
Poster Session
Proc. SPIE 9776, Study on RLS trade-off resist upgrade for production ready EUV lithography, 977623(18 March 2016);doi: 10.1117/12.2219558
EUV Materials II: CARs and Novel Approaches: Joint Session with Conferences 9776 and 9779
Proc. SPIE 9776, Negative-tone imaging with EUV exposure toward 13nm hp, 977608(18 March 2016);doi: 10.1117/12.2218761
Proc. SPIE 9776, Approach to hp10nm resolution by applying Dry Development Rinse Process (DDRP) and Materials (DDRM), 977609(18 March 2016);doi: 10.1117/12.2219475
EUV Integration
Proc. SPIE 9776, Demonstration of an N7 integrated fab process for metal oxide EUV photoresist, 97760B(18 March 2016);doi: 10.1117/12.2220051
Proc. SPIE 9776, EUV process establishment through litho and etch for N7 node, 97760C(18 March 2016);doi: 10.1117/12.2218885
Proc. SPIE 9776, Improvement of EUV mix-match overlay for production implementation, 97760E(18 March 2016);doi: 10.1117/12.2219169
EUV Mask
Proc. SPIE 9776, 3D mask effects of absorber geometry in EUV lithography systems, 97760F(18 March 2016);doi: 10.1117/12.2219708
Proc. SPIE 9776, Etched-multilayer black border formed on EUV mask: Does it cause image degradation during pattern inspection using EB optics?, 97760G(18 March 2016);doi: 10.1117/12.2218940
Proc. SPIE 9776, Aerial imaging study of the mask-induced line-width roughness of EUV lithography masks, 97760H(4 April 2016);doi: 10.1117/12.2219513
Proc. SPIE 9776, Throughput compensation through optical proximity correction for realization of an extreme-ultraviolet pellicle, 97760I(18 March 2016);doi: 10.1117/12.2220155
EUV Source I
Proc. SPIE 9776, High-radiance LDP source: clean, reliable, and stable EUV source for mask inspection, 97760L(18 March 2016);doi: 10.1117/12.2219219
Proc. SPIE 9776, Study of Sn removal processes for in-situ collector cleaning, 97760M(18 March 2016);doi: 10.1117/12.2219394
EUV Source II
Proc. SPIE 9776, Energy effective dual-pulse bispectral laser for EUV lithography, 97760Q(18 March 2016);doi: 10.1117/12.2219931
Proc. SPIE 9776, Enabling laboratory EUV research with a compact exposure tool, 97760R(18 March 2016);doi: 10.1117/12.2219164
Proc. SPIE 9776, Tin LPP plasma control in the argon cusp source, 97760S(18 March 2016);doi: 10.1117/12.2222299
Proc. SPIE 9776, Free electron lasers for 13nm EUV lithography: RF design strategies to minimise investment and operational costs, 97760T(18 March 2016);doi: 10.1117/12.2218966
EUV Resist I
Proc. SPIE 9776, EUV resists: What's next?, 97760V(18 March 2016);doi: 10.1117/12.2225017
Proc. SPIE 9776, Benchmarking study of EUV resists for NXE:3300B, 97760W(4 April 2016);doi: 10.1117/12.2222065
Proc. SPIE 9776, Patterning performance of chemically amplified resist in EUV lithography, 97760Y(18 March 2016);doi: 10.1117/12.2218417
Proc. SPIE 9776, Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography, 97760Z(18 March 2016);doi: 10.1117/12.2220026
Proc. SPIE 9776, EUV extendibility via dry development rinse process, 977610(11 April 2016);doi: 10.1117/12.2220113
EUV Resist II
Proc. SPIE 9776, Dynamic absorption coefficients of CAR and non-CAR resists at EUV, 977612(18 March 2016);doi: 10.1117/12.2219193
Proc. SPIE 9776, Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography, 977614(18 March 2016);doi: 10.1117/12.2219221
EUV Mask and Optics
Proc. SPIE 9776, Novel EUV mask black border and its impact on wafer imaging, 977615(18 March 2016);doi: 10.1117/12.2218942
Proc. SPIE 9776, EUV and optical lithographic pattern shift at the 5nm node, 977616(18 March 2016);doi: 10.1117/12.2217532
Proc. SPIE 9776, Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners, 977617(18 March 2016);doi: 10.1117/12.2218918
Proc. SPIE 9776, Image-based pupil plane characterization via principal component analysis for EUVL tools, 977618(18 March 2016);doi: 10.1117/12.2219745
Proc. SPIE 9776, Improved Ru/Si multilayer reflective coatings for advanced extreme-ultraviolet lithography photomasks, 977619(18 March 2016);doi: 10.1117/12.2219215
EUV Mask Inspection and Imaging
Proc. SPIE 9776, Actinic review of EUV masks: performance data and status of the AIMS EUV System, 97761A(18 March 2016);doi: 10.1117/12.2219247
Proc. SPIE 9776, EUV mask and wafer defectivity: strategy and evaluation for full die defect inspection, 97761C(19 March 2016);doi: 10.1117/12.2219601
Proc. SPIE 9776, Enhancing native defect sensitivity for EUV actinic blank inspection: optimized pupil engineering and photon noise study, 97761D(11 April 2016);doi: 10.1117/12.2220277
Proc. SPIE 9776, Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation, 97761E(18 March 2016);doi: 10.1117/12.2218763
Proc. SPIE 9776, Scanning coherent diffractive imaging methods for actinic EUV mask metrology, 97761F(18 March 2016);doi: 10.1117/12.2219937
Proc. SPIE 9776, Advances in the detection capability on actinic blank inspection, 97761G(18 March 2016);doi: 10.1117/12.2222747
Proc. SPIE 9776, Through-pellicle defect inspection of EUV masks using an ArF-based inspection tool, 97761H(18 March 2016);doi: 10.1117/12.2218454
EUV Extension
Proc. SPIE 9776, EUV high-NA scanner and mask optimization for sub-8nm resolution, 97761I(18 March 2016);doi: 10.1117/12.2220150
Proc. SPIE 9776, Emulation of anamorphic imaging on the SHARP EUV mask microscope, 97761J(18 March 2016);doi: 10.1117/12.2219294
Proc. SPIE 9776, High-NA EUV projection lens with central obscuration, 97761L(18 March 2016);doi: 10.1117/12.2219933
Proc. SPIE 9776, Study of Gd/Tb LPP emission near λ = 6.7nm for beyond EUV lithography, 97761M(18 March 2016);doi: 10.1117/12.2219840
Proc. SPIE 9776, Current development status of HSFET (High NA Small Field Exposure Tool) in EIDEC, 97761N(18 March 2016);doi: 10.1117/12.2219368
EUV Patterning I
Proc. SPIE 9776, Contrast optimization for 0.33NA EUV lithography, 97761P(26 April 2016);doi: 10.1117/12.2220036
Proc. SPIE 9776, Extension of practical k1 limit in EUV lithography, 97761Q(18 March 2016);doi: 10.1117/12.2219546
Proc. SPIE 9776, Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs, 97761R(18 March 2016);doi: 10.1117/12.2219177
EUV Patterning II
Proc. SPIE 9776, Assist features: placement, impact, and relevance for EUV imaging, 97761S(18 March 2016);doi: 10.1117/12.2220025
Proc. SPIE 9776, EUV implementation of assist features in contact patterns, 97761U(18 March 2016);doi: 10.1117/12.2218315
Proc. SPIE 9776, Photolithography reaches 6 nm half-pitch using EUV light, 97761V(18 March 2016);doi: 10.1117/12.2219737
Proc. SPIE 9776, EUV patterned templates with grapho-epitaxy DSA at the N5/N7 logic nodes, 97761W(18 March 2016);doi: 10.1117/12.2219876
Proc. SPIE 9776, Novel detection and process improvement for organic coating-film defects, 97761X(18 March 2016);doi: 10.1117/12.2218981