Strong interest has recently developed among the researchers in the use of metals in extreme ultraviolet (EUV) lithography photoresists [1, 2] aiming to simultaneously achieve the resolution, line-width roughness and sensitivity (RLS) requirements for 10nm technology node and below and have the highest productivity with low exposure dose requirements (below 20mJ/cm2). In this paper two different metal containing resists (MCR) are discussed: the first one uses metal oxide nanoparticles (NP) bonded with ligands as an alternative non chemically amplified EUV photoresist; the second one introduces a metal species (the sensitizer) into a conventional chemically amplified EUV photoresist. In both cases, the metal is added to the resist system to increase the absorption of EUV photons as well as increase the generation of secondary electrons, thereby making more effective use of the dose. The initial work is focused on manufacturing compatibility, concerning metal cross-contamination, outgassing and hydrides formation risk. Next, lithographic performance is evaluated with respect to the RLS requirements by patterning on NXE:3300 full field scanner exposure tool, with particular emphasis on the material stability of different formulations.. Finally, imaging results at different processing conditions are also reported and discussed.